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MIG150Q6CMB1X
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
MIG150Q6CMB1X (1200V/150A 6in1)
High Power Switching Applications Motor Control Applications
* * * * * * Integrates inverter power circuits and control circuits (IGBT drive units, and units for protection against short-circuit current, overcurrent, undervoltage and overtemperature) into a single package. The electrodes are isolated from the case. Low thermal resistance VCE (sat) = 2.4 V (typ.) UL recognized: File No.E87989 Weight: 385 g (typ.)
Equivalent Circuit
20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
FO
IN VD GND
FO
IN VD GND
FO
IN VD GND
GND IN FO VD
GND IN FO VD
GND IN FO VD
GND VS
OUT
GND VS
OUT
GND VS
OUT
GND VS
OUT
GND VS
OUT
GND VS
OUT
W 1. 8. 15. VD (U) GND (V) Open 2. 9. 16. FO (U) VD (W) Open
V 3. 10. 17. IN (U) FO (W) IN (X) 4. 11. 18.
U GND (U) IN (W) IN (Y) 5. 12. 19. VD (V) GND (W) IN (Z) 6. 13. 20. FO (V) VD (L)
N 7. 14. IN (V) FO (L)
P
GND (L)
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MIG150Q6CMB1X
Package Dimensions: TOSHIBA 2-123A1A
Unit: mm
1. 8. 15.
VD (U) GND (V) Open
2. 9. 16.
FO (U) VD (W) Open
3. 10. 17.
IN (U) FO (W) IN (X)
4. 11. 18.
GND (U) IN (W) IN (Y)
5. 12. 19.
VD (V) GND (W) IN (Z)
6. 13. 20.
FO (V) VD (L) GND (L)
7. 14.
IN (V) FO (L)
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MIG150Q6CMB1X
Signal Terminal Layout
Unit: mm
1. 8. 15.
VD (U) GND (V) Open
2. 9. 16.
FO (U) VD (W) Open
3. 10. 17.
IN (U) FO (W) IN (X)
4. 11. 18.
GND (U) IN (W) IN (Y)
5. 12. 19.
VD (V) GND (W) IN (Z)
6. 13. 20.
FO (V) VD (L) GND (L)
7. 14.
IN (V) FO (L)
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MIG150Q6CMB1X
Maximum Ratings (Tj = 25C)
Stage Supply voltage Collector-emitter voltage Inverter Collector current Forward current Collector power dissipation Junction temperature Control supply voltage Input voltage Control Fault output voltage Fault output current Operating temperature Storage temperature range Module Isolation voltage Screw torque AC 1 min M5 FO-GND terminal FO sink current Tc = 25C, DC Tc = 25C, DC Tc = 25C 3/4 VD-GND terminal IN-GND terminal Characteristics Condition P-N power terminal 3/4 Symbol VCC VCES IC IF PC Tj VD VIN VFO IFO Rating 900 1200 150 150 1400 150 20 20 20 14 -20~+100 -40~+125 2500 3 Unit V V A A W C V V V mA C C V Nm
3/4 3/4
Tc Tstg VISO 3/4
Electrical Characteristics
1. Inverter stage
Characteristics Collector cut-off current Symbol ICEX Test Condition VCE = 1200 V VD = 15 V IC = 150 A VIN = 15 V (R) 0 V Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 3/4 3/4 3/4 3/4 3/4 3/4 VCC = 600 V, IC = 150 A VD = 15 V, VIN = 15 V 0 V Tj = 25C, Inductive load (Note 1) 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 2.4 2.8 2.4 2.0 0.6 0.3 1.0 0.3 Max 1 10 2.8 3/4 2.8 3.0 3/4 3/4 2.0 3/4 ms V V Unit mA
Collector-emitter saturation voltage Forward voltage
VCE (sat) VF ton tc (on)
IF = 150 A, Tj = 25C
Switching time
trr toff tc (off)
Note 1: Switching time test circuit & timing chart
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2. Control stage (Tj = 25C)
Characteristics Control circuit current Input on signal voltage Input off signal voltage Protection Fault output current Normal Overcurrent protection trip Inverter level Short-circuit protection trip level Overcurrent cut-off time Overtemperature protection Control supply under voltage protection Fault output pulse width Trip level Reset level Trip level Reset level Inverter High side Low side Symbol ID (H) ID (L) VIN (on) VIN (off) IFO (on) IFO (off) OC SC toff (OC) OT Case temperature OTr UV UVr tFO VD = 15 V 3/4 VD = 15 V Test Condition Min 3/4 3/4 1.4 2.2 3/4 3/4 240 240 3/4 110 3/4 11.0 12.0 1 Typ. 13 39 1.6 2.5 10 3/4 3/4 3/4 5 118 98 12.0 12.5 2 Max 17 51 1.8 V 2.8 12 mA 0.1 3/4 3/4 3/4 125 3/4 12.5 V 13.0 3 ms C A A ms Unit mA
VD = 15 V
VD = 15 V VD = 15 V, Tj < 125C = VD = 15 V, Tj < 125C = VD = 15 V
3. Thermal resistance (Tc = 25C)
Characteristics Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) IGBT FRD Compound is applied Test Condition Min 3/4 3/4 3/4 Typ. 3/4 3/4 0.013 Max 0.089 0.19 3/4 C/W Unit C/W
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MIG150Q6CMB1X
Switching Time Test Circuit
Intelligent power module TLP559 VD 0.1 mF 15 kW OUT IN 15 V 47 mF GND VS P
GND U (V, W) VCC
VD IF = 16 mA PG 15 V 47 mF GND 0.1 mF 15 kW OUT IN VS N
GND
Timing Chart
Input pulse 15 V VIN Waveform 0
2.5 V
1.6 V
90% Irr IC Waveform Irr 90% trr 20% Irr
VCE Waveform
10% toff
10% tc (off)
10% ton
10% tc (on)
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MIG150Q6CMB1X
4. Recommended conditions for application
Characteristics Supply voltage Control supply voltage Carrier frequency Dead time Symbol VCC VD fc tdead Test Condition P-N power terminal VD-GND signal terminal PWM control Switching time test circuit (Note 2) Min 3/4 13.5 3/4 5 Typ. 600 15 3/4 3/4 Max 800 16.5 20 3/4 Unit V V kHz ms
Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above.
Dead Time Timing Chart
15 V VIN Waveform 0 15 V VIN Waveform 0 tdead tdead
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MIG150Q6CMB1X
IC - VCE
300 Common emitter Tj = 25C VD = 17 V 300 Common emitter Tj = 125C
IC - VCE
(A)
(A)
VD = 17 V 200 VD = 13 V
IC
Collector current
VD = 15 V 100
Collector current
IC
200
VD = 13 V
100 VD = 15 V
0 0
1
2
3
4
0 0
1
2
3
4
Collector-emitter voltage
VCE
(V)
Collector-emitter voltage
VCE
(V)
Switching time - IC
10 10
Switching time - IC
ton ton
(ms)
1
toff tc (on) tc (off)
(ms)
toff 1 tc (on) tc (off)
Switching time
0.1
Switching time
Tj = 25C VCC = 600 V VD = 15 V L-Load
0.1
Tj = 125C VCC = 600 V VD = 15 V L-Load
0.01 0
50
100
150
200
0.01 0
50
100
150
200
Collector current
IC
(A)
Collector current
IC
(A)
IF - VF
300 100
trr, Irr - IF
Peak reverse recovery current Irr (A) Reverse recovery time trr ( 10 ns)
Common cathode
(A) Forward current IF
200
Irr 10
trr
Tj = 125C Tj = 25C 100
Common cathode Tj = 25C Tj = 125C 1 0 50 100 150 200
0 0
1
2
3
4
Forward voltage
VF
(V)
Forward current
IF
(A)
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MIG150Q6CMB1X
OC - Tc
(A) (mA)
500 40
ID (H) - fc
400
High side control circuit current ID (H)
Overcurrent protection trip level OC
30
300
20
200
10 VD = 15 V Tj = 25C 0 0 5 10 15 20 25
100 VD = 15 V 0 0 25 50 75 100 125 150
Case temperature Tc
(C)
Carrier frequency fc
(kHz)
ID (L) - fc
(mA)
100 280
Reverse bias SOA
OC 240
Low side control circuit current ID (L)
(A) IC Collector current
VD = 15 V Tj = 25C
80
200 160 120
60
40
80 Vj < 125C = 40 VD = 15 V 0 0
20
0 0
5
10
15
20
25
100
200
300
400
500
600
700
Carrier frequency fc
(kHz)
Collector-emitter voltage
VCE
(V)
Rth (t) - tw inverter stage
(C/W)
1 Tc = 25C Diode stage 0.1 Transistor stage
Transient thermal resistance Rth (t)
0.01
0.001 0.001
0.01
0.1
1
10
Pulse width
tw
(s)
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MIG150Q6CMB1X
Turn on loss - IC
100 Tj = 125C 100 Tj = 125C Tj = 25C
Turn off loss - IC
(mJ)
10
(mJ)
10 Tj = 25C
Eon
Turn on loss
0.1
Turn off loss
1
Eoff
1
VCC = 600 V VD = 15 V L-Load
0.1
VCC = 600 V VD = 15 V L-Load
0.01 0
50
100
150
200
0.01 0
50
100
150
200
Collector current
IC
(A)
Collector current
IC
(A)
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MIG150Q6CMB1X
RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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